E-Mail:sales@czgraphite.com
Tel:+86 15533739372
Graphite susceptors are widely used in semiconductor production, particularly in chemical vapor deposition (CVD) and epitaxial processes. These components serve as carriers or heating elements that ensure uniform temperature distribution, enhancing the quality of semiconductor wafers.
Ion implantation components are made from materials that are high purity, thermally conductive and resistant to harsh environments.
Components are carefully engineered to ensure precise beam alignment, uniform dose distribution and minimal scattering effects.
Ion implantation components are coated or treated to improve wear resistance, minimize particle generation and extend their service life.
Integrate efficient heat dissipation methods to maintain stable temperatures during ion implantation, ensuring consistent results.
Ion implantation components are designed to match specific equipment.
Made from graphite, our heat-resistant components offer an ideal combination of corrosion resistance, material strength, good thermal conductivity and absolute purity.
In the semiconductor industry, graphite materials are widely used due to their excellent properties such as electrical and thermal conductivity, corrosion resistance, mechanical processing performance, and self-lubrication. Graphite products can not only improve production efficiency and product quality, but also ensure the high reliability and high performance of semiconductor devices.
Graphite can be applies to the crystal growing or the subsequent finishing with epitaxy or ion implantation. These processes take place at very high temperatures and in extremely corrosive environments. At the same time, highest purity and absolute precision are required.
Graphite heaters, support crucibles, heat shields and insulating components for crystal growing hot zones.
Graphite can also be used as high-precision graphite components for wafer processing equipment like SiC-coated graphite susceptors.
These processes occur in high temperature and highly corrosive environments and require graphite materials to be of the highest purity and absolute precision. Graphite products have excellent performance and can meet the semiconductor industry's requirements for high-precision, high-quality production.
Ion implantation is an important process in semiconductor production. Implantation systems dope wafers with foreign atoms to change material properties, such as conductivity or crystal structure. The beam path is the heart of the implanter system. Here, ions are generated, concentrated, greatly accelerated, and focused on the wafer at very high speeds. During ion implantation, dopant ions are accelerated and implanted inside a single-crystalline silicon substrate to manipulate its bulk properties. Arsenic, boron, phosphorus, and germanium are some typical doping materials.
For successful operation, beam purity and process stability are important. Here, graphite and refractory metal components play a vital role. Overall, the total cost of maintaining the system can be reduced when traditional materials are replaced with higher quality materials and process-specific alloys.
Material compatibility: Ion implantation components are made of materials with high purity, excellent thermal conductivity, and resistance to harsh environments.
Precision design: Components are carefully designed to ensure precise beam alignment, uniform dose distribution, and minimal scattering effects.
Wear resistance: Ion implantation components are coated or treated to improve wear resistance, minimize particle generation, and extend their service life.
Temperature Control: Integrates efficient heat dissipation methods to keep the temperature stable during the ion implantation process, ensuring consistent results.
Customization: Ion implantation components are designed to match specific equipment
Temperatures up to 1400°C, strong electromagnetic fields, aggressive process gases and high mechanical forces are a big problem for conventional materials. Our heat-resistant components are made of graphite, which provides an ideal combination of corrosion resistance, material strength, good thermal conductivity and absolute purity. They ensure that ions are efficiently produced and precisely focused on the wafer in the beam path without any impurities. Our graphite components and spare parts help ensure that the process is as efficient, precise and impurity-free as possible.
High strength and high temperature resistance.
High electrical & thermal conductivity, corrosion resistance.
Excellent machinability.
High purity and low ash content (can be purified to 5 ppm).
Russian
